Reactive Sputtering Process Study for Vanadium Oxynitride Films

In this study, vanadium oxynitride thin films were deposited by reactive magnetron sputtering using pure targets, Ar as a plasma carrier, and mix of N2 O2 gases. Various ratios mass flow rates between two gases maintained constant during the process. To obtain crystalline phases oxynitrides, rapid thermal annealing in atmosphere at 600 °C 700 for 5 min was conducted after deposition. This study aims to define range process parameters deposit films. The assessment characterization utilizes surface profiler, scanning electron microscope, X-ray diffraction, photoelectron spectroscopy, four-point probe, Hall analyzer, UV-visible-NIR spectrometer. Experimental results reveal that annealed can be oxynitrides when oxygen rate is below 0.25 sccm, ratio oxygen/nitrogen no more than ~1/10. films, terms their properties, are closer nitrides oxides, due intended low supply For instance, film metallic semi-conductive with dark appurtenance high optical absorbance across spectrum 200 900 nm. practical purposes, deposition conditions O2:N2 = 1/20, < recommended relatively lower resistivity (10−2 Ω cm) transmittance (<15%) through